Off-state degradation and recovery in Oxide/AlGaN/GaN heterointerfaces: importance of band offset, electron, and hole trapping
The properties of the oxide/AlGaN heterointerface are investigated from field-dependent off-
state degradation and recovery in thermally grown NiO x-, TiO2-, and Al2O3-based metal …
state degradation and recovery in thermally grown NiO x-, TiO2-, and Al2O3-based metal …
GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors
GaN-based high electron mobility transistors (HEMTs) have received much attention due to
their potential usage in radio-frequency and high power applications. However, the …
their potential usage in radio-frequency and high power applications. However, the …
Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors
J Jha, S Surapaneni, A Kumar… - 2019 6th International …, 2019 - ieeexplore.ieee.org
This work explores the effect of varying widths and multi-fingers on the DC performance of
Gallium Nitride power High Electron Mobility Transistors (GaN HEMTs). The experimental …
Gallium Nitride power High Electron Mobility Transistors (GaN HEMTs). The experimental …