Deep n-well dtscr with fast turn-on speed for low-voltage esd protection applications
B Ma, S Chen, R Chen, H Liu, S Wang, Z Han - Microelectronics Reliability, 2024 - Elsevier
In this article, a novel low trigger and fast turn on electrostatic discharge (ESD) protection
device, called deep N-well diode-triggered silicon-controlled-rectifier (DNWTSCR), is …
device, called deep N-well diode-triggered silicon-controlled-rectifier (DNWTSCR), is …
[PDF][PDF] NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder
SN Shukla, SS Arshad, G Srivastava - International Journal of Power …, 2022 - academia.edu
Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal
amplitudes of bio signals make brain-computer interface (BCI) application studies a …
amplitudes of bio signals make brain-computer interface (BCI) application studies a …
Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection
Z Yang, C Qi, D Fu, S Pu, X Wang… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
In this letter, a modified low-voltage triggered silicon-controlled rectifier (LVTSCR) is
proposed and fabricated for electrostatic discharge (ESD) protection in a 0.18-1.8-V CMOS …
proposed and fabricated for electrostatic discharge (ESD) protection in a 0.18-1.8-V CMOS …
A novel voltage divider trigger SCR with low leakage current for low-voltage ESD application
J Liu, Y Liu, A Han, Y Nie, Q Huang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, a novel voltage divider trigger silicon-controlled rectifier (VDTSCR) with low
trigger voltage and low leakage current for electrostatic discharge (ESD) protection …
trigger voltage and low leakage current for electrostatic discharge (ESD) protection …
A novel DTSCR with embedded MOS and island diodes for ESD protection of high-speed ICs
H Liang, Q Ma, J Sun, J Liu, X Gu - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A novel diode-triggered silicon-controlled rectifier with embedded MOS and island diodes
(DTSCR-EMOS-ID) is proposed and investigated. The DTSCR-EMOS-ID was fabricated in …
(DTSCR-EMOS-ID) is proposed and investigated. The DTSCR-EMOS-ID was fabricated in …
[PDF][PDF] Study of Low-Noise Wide-Band Tuned Sziklai Pair Small-Signal Amplifier
SN Shukla, G Srivastava, SS Arshad - Research Trends and …, 2021 - researchgate.net
The objective of the paper is to propose and study the modified version of NPN-driven
Sziklai pair small-signal amplifier with user-defined PSpice model of unmatched BJTs. With …
Sziklai pair small-signal amplifier with user-defined PSpice model of unmatched BJTs. With …
[HTML][HTML] Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection
A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process
electrostatic discharge (ESD) protection applications is proposed. The transmission line …
electrostatic discharge (ESD) protection applications is proposed. The transmission line …
Efficient Silicon-Controlled Rectifier Devices for Cross-Power-Domain ESD Protections
Z Yang, L Wei, T Long, D Fu, Y Zhang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Electrostatic discharge (ESD) protection is a challenging issue for integrated circuits (ICs)
with cross-power-domains. In this article, an efficient ESD protection scheme based on …
with cross-power-domains. In this article, an efficient ESD protection scheme based on …
Asymmetric Early Leakage Failure in Bi-Directional SCR ESD Protection Device in BCD Technology
A bi-directional silicon-controlled rectifier (Bi-SCR) electrostatic discharge (ESD) protection
device consisting of a left SCR connected to the anode and a right SCR connected to the …
device consisting of a left SCR connected to the anode and a right SCR connected to the …
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection
Z Han, S Chen, H Liu, S Wang, B Ma, R Chen, X Fu - Micromachines, 2023 - mdpi.com
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel
diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for …
diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for …