In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

It is proven that introduction of graphene into typical heterostructures can effectively reduce
the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene …

Reduced graphene oxide/gallium nitride (RGO–GaN) nanocomposites were synthesized by
a facile single-step chemical reduction process with variation in the concentration of GaN …

Graphene has been adopted in III− V material growth since it can reduce the threading
dislocations and the III− V epilayer can easily be separated from the substrate due to the …

In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-
emitting diodes (LED), which can efficiently reduce the threading dislocation densities …

In this work, Raman spectroscopy was employed to examine the interface properties of
chemically synthesized Gallium Nitride decorated reduced graphene oxide (rGO/GaN) …

In this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …

Graphene or reduced-graphene-oxide are used in gallium nitride-based electronic devices
because of similar properties such as transparency and high thermal conductivity. To date …

A highly transparent paste adhesive is successfully fabricated by introducing graphene
oxide (GO) to silicone paste adhesive by using a solvent-exchange method. The GO …

In this work, one type of direct current high voltage light‐emitting diode (DC‐HV LED) and
six types of alternating current high voltage LEDs (AC‐HV LEDs) are demonstrated …