Reaction of the Oxygen Molecule at the Interface During Silicon Oxidation
A Bongiorno, A Pasquarello - Physical review letters, 2004 - APS
Using constrained ab initio molecular dynamics, we investigate the reaction of the O 2
molecule at the S i (100)-S i O 2 interface during Si oxidation. The reaction proceeds …
molecule at the S i (100)-S i O 2 interface during Si oxidation. The reaction proceeds …
Chemical modification of silicon surfaces for biological applications
MP Schwartz, F Cunin, RW Cheung… - physica status solidi …, 2005 - Wiley Online Library
The attachment of poly (ethylene glycol) to porous Si surfaces via Si–C bonds using simple
chemical techniques and commercially available starting materials is described. Poly …
chemical techniques and commercially available starting materials is described. Poly …
Adsorption of atomic oxygen and nitrogen at β-cristobalite (100): a density functional theory study
C Arasa, P Gamallo, R Sayós - The Journal of Physical Chemistry …, 2005 - ACS Publications
The adsorption of atomic oxygen and nitrogen on the β-cristobalite (100) surface is
investigated from first principles density functional calculations within the generalized …
investigated from first principles density functional calculations within the generalized …
Computational design of interfaces: Stress and strain on the atomic scale
In this paper, we present results of a comparative computational study of silicon oxide
interfaces with (100),(111), and (110) silicon surfaces. Density functional theory (DFT) in the …
interfaces with (100),(111), and (110) silicon surfaces. Density functional theory (DFT) in the …
First-principles study on silicon emission from interface into oxide during silicon thermal oxidation
Using the first-principles calculation, the diffusion path is explored in the Si emission from
the interface into the Si oxide surface during the Si oxidation process, by assuming that the …
the interface into the Si oxide surface during the Si oxidation process, by assuming that the …
Diffusion of oxygen atom in the topmost layer of the Si (1 0 0) surface: Structures and oxidation kinetics
The incorporations and migrations of the atomic oxygen in the topmost layer Si (100)-p (2×
2) silicon surface, are investigated theoretically using density functional theory. We show …
2) silicon surface, are investigated theoretically using density functional theory. We show …
Correlations between structural and optical properties of peroxy bridges from first principles
This work aims at addressing the issue of the optical signature of peroxy bridges by using
first-principles methods that combine density functional theory, GW (where G and W stand …
first-principles methods that combine density functional theory, GW (where G and W stand …
Reconsideration of Si pillar thermal oxidation mechanism
H Kageshima, K Shiraishi, T Endoh - Japanese Journal of …, 2018 - iopscience.iop.org
The mechanism of Si pillar thermal oxidation is considered. The Si emission is discussed in
the oxidation of three-dimensional structures, which must be fundamentally important to …
the oxidation of three-dimensional structures, which must be fundamentally important to …
Atomic-scale modelling of kinetic processes occurring during silicon oxidation
A Bongiorno, A Pasquarello - Journal of Physics: Condensed …, 2005 - iopscience.iop.org
We model the fundamental kinetic processes occurring during silicon oxidation at the atomic
scale. We first focus on the diffusion of the neutral O 2 molecule through the oxide layer. By …
scale. We first focus on the diffusion of the neutral O 2 molecule through the oxide layer. By …
Ab initio study of oxygen interstitial diffusion near interfaces
C Tang, R Ramprasad - Physical Review B—Condensed Matter and Materials …, 2007 - APS
The tendency of oxygen interstitials to diffuse and segregate to the Si: Hf O 2 interface is
evaluated by performing first principles interstitial formation and migration energy …
evaluated by performing first principles interstitial formation and migration energy …