Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy
X Lin, H Zhang, C Li, X Xie, L Bian, G Chen - Journal of Crystal Growth, 2024 - Elsevier
Control of the growth process is important for growing high-quality AlN films. In this work, AlN
films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy …
films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy …
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
Herein, a 3.5 GHz (S‐band) power performance is reported on an AlGaN/GaN high‐electron‐
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate
J Li, Y Yuan, T Cai, H Yin, J Zhao, J Cao… - The European Physical …, 2024 - Springer
In this paper, a single-crystalline AlN film was prepared on a 4 off-cut 4H-SiC substrate using
magnetron sputtering (Sp) combined with high-temperature annealing (HTA). The evolution …
magnetron sputtering (Sp) combined with high-temperature annealing (HTA). The evolution …