All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the
small signal magnitude used for magnetization readout, making it important to find materials …
small signal magnitude used for magnetization readout, making it important to find materials …
A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators
V Brehm, JW Austefjord, S Lepadatu… - Scientific Reports, 2023 - nature.com
Brain-inspired neuromorphic computing is a promising path towards next generation
analogue computers that are fundamentally different compared to the conventional von …
analogue computers that are fundamentally different compared to the conventional von …
Measurement of the spin absorption anisotropy in lateral spin valves
M Cosset-Chéneau, L Vila, G Zahnd, D Gusakova… - Physical Review Letters, 2021 - APS
The spin absorption process in a ferromagnetic material depends on the spin orientation
relative to the magnetization. Using a ferromagnet to absorb the pure spin current created …
relative to the magnetization. Using a ferromagnet to absorb the pure spin current created …
Unified framework for charge-spin interconversion in spin-orbit materials
Materials with spin-orbit coupling are of great interest for various spintronics applications
due to the efficient electrical generation and detection of spin-polarized electrons. Over the …
due to the efficient electrical generation and detection of spin-polarized electrons. Over the …
Transmission-line model for materials with spin-momentum locking
We provide a transmission-line representation for channels exhibiting spin-momentum
locking (SML) that can be used for both time-dependent and steady-state transport analysis …
locking (SML) that can be used for both time-dependent and steady-state transport analysis …
Efficient magnetic domain nucleation and domain wall motion with voltage control magnetic anisotropy effect and Antiferromagnetic/Ferromagnetic coupling
The magnetic domain is a promising solution for realizing the next-generation information
storage, for example, racetrack memory (RM). However, domain nucleation and domain wall …
storage, for example, racetrack memory (RM). However, domain nucleation and domain wall …
Dynamical spin injection and spin to charge current conversion in oxide-based Rashba interfaces and topological insulators
P Noel - 2019 - theses.hal.science
Using a ferromagnetic layer has been the first method to obtain and detect spin currents,
allowing to modify the magnetization state of an adjacent layer using spin transfer torque …
allowing to modify the magnetization state of an adjacent layer using spin transfer torque …
Single nanomagnet memory device for magnetic random access memory applications
A spintronic memory device having a spin momentum-locking (SML) channel, a
nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal …
nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal …
Effets d'accumulation de spin et de magnétorésistance dans des nanostructures latérales
G Zahnd - 2017 - theses.hal.science
La spintronique est principalement basée sur le phénomène d'accumulation de spin,
inhérent à la circulation d'un courant électrique aux interfaces entre des matériaux …
inhérent à la circulation d'un courant électrique aux interfaces entre des matériaux …
Controlling spin-orbit torque in perpendicular exchange-biased systems for domain wall computing
F PIROLA - 2019 - politesi.polimi.it
The possibility of employing magnetic elements for logic computation has recently emerged
as an alternative to the traditional technology, based on electron transport in CMOS …
as an alternative to the traditional technology, based on electron transport in CMOS …