All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x

WY Choi, IC Arango, VT Pham, DC Vaz, H Yang… - Nano Letters, 2022 - ACS Publications
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the
small signal magnitude used for magnetization readout, making it important to find materials …

A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators

V Brehm, JW Austefjord, S Lepadatu… - Scientific Reports, 2023 - nature.com
Brain-inspired neuromorphic computing is a promising path towards next generation
analogue computers that are fundamentally different compared to the conventional von …

Measurement of the spin absorption anisotropy in lateral spin valves

M Cosset-Chéneau, L Vila, G Zahnd, D Gusakova… - Physical Review Letters, 2021 - APS
The spin absorption process in a ferromagnetic material depends on the spin orientation
relative to the magnetization. Using a ferromagnet to absorb the pure spin current created …

Unified framework for charge-spin interconversion in spin-orbit materials

S Sayed, S Hong, X Huang, L Caretta, AS Everhardt… - Physical Review …, 2021 - APS
Materials with spin-orbit coupling are of great interest for various spintronics applications
due to the efficient electrical generation and detection of spin-polarized electrons. Over the …

Transmission-line model for materials with spin-momentum locking

S Sayed, S Hong, S Datta - Physical Review Applied, 2018 - APS
We provide a transmission-line representation for channels exhibiting spin-momentum
locking (SML) that can be used for both time-dependent and steady-state transport analysis …

Efficient magnetic domain nucleation and domain wall motion with voltage control magnetic anisotropy effect and Antiferromagnetic/Ferromagnetic coupling

J Nan, Y Zhang, Z Zhang, K Zhang… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The magnetic domain is a promising solution for realizing the next-generation information
storage, for example, racetrack memory (RM). However, domain nucleation and domain wall …

Dynamical spin injection and spin to charge current conversion in oxide-based Rashba interfaces and topological insulators

P Noel - 2019 - theses.hal.science
Using a ferromagnetic layer has been the first method to obtain and detect spin currents,
allowing to modify the magnetization state of an adjacent layer using spin transfer torque …

Single nanomagnet memory device for magnetic random access memory applications

S Sayed, S Datta, EE Marinero-Caceres - US Patent 10,497,416, 2019 - Google Patents
A spintronic memory device having a spin momentum-locking (SML) channel, a
nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal …

Effets d'accumulation de spin et de magnétorésistance dans des nanostructures latérales

G Zahnd - 2017 - theses.hal.science
La spintronique est principalement basée sur le phénomène d'accumulation de spin,
inhérent à la circulation d'un courant électrique aux interfaces entre des matériaux …

Controlling spin-orbit torque in perpendicular exchange-biased systems for domain wall computing

F PIROLA - 2019 - politesi.polimi.it
The possibility of employing magnetic elements for logic computation has recently emerged
as an alternative to the traditional technology, based on electron transport in CMOS …