Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect
In this paper, some important circuit parameters of a monolayer armchair graphene
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …
Theoretical investigation of graphene nanoribbon field-effect transistors designed for digital applications
N Harada, S Sato, N Yokoyama - Japanese Journal of Applied …, 2013 - iopscience.iop.org
Nanometer-scale, single-gate graphene nanoribbon Schottky barrier field-effect transistors
(FETs) were theoretically investigated using self-consistent atomistic simulation. The device …
(FETs) were theoretically investigated using self-consistent atomistic simulation. The device …
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model
M Bresciani, P Palestri, D Esseni, L Selmi… - Solid-state …, 2013 - Elsevier
In this paper we compare experimental data and simulations based on a semiclassical
model in order to investigate the relative importance of a several scattering mechanisms on …
model in order to investigate the relative importance of a several scattering mechanisms on …
Method for manufacturing graphine film electronic device
A GNR is a ribbon-shaped graphene film which includes: five or more (for example, five,
seven, or nine) six-membered rings of carbon atoms which are bonded and arranged in line …
seven, or nine) six-membered rings of carbon atoms which are bonded and arranged in line …