Fluctuating potentials in GaAs: Si nanowires: critical reduction of the influence of polytypism on the electronic structure
In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111) B by
molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations …
molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations …
The dependence of structural, optical and electrical properties on substrates for GaAs nanowires grown by metal organic chemical vapor deposition
D Yang, B Zhang, D Wang, H Wang, D Fang… - Physica E: Low …, 2023 - Elsevier
GaAs nanowires (NWs) play important roles in the field of low-dimensional infrared
photodetector and laser. In this work, the GaAs NWs are directly grown on Al 2 O 3, Si and …
photodetector and laser. In this work, the GaAs NWs are directly grown on Al 2 O 3, Si and …
Insights into recombination channels in a CVT grown ZnSe single crystal
Native defects and unintentional contaminations during growth can strongly influence the
optical properties of semiconductors and their applications. The tailoring of these optical …
optical properties of semiconductors and their applications. The tailoring of these optical …
Photodegradation of Si-doped GaAs nanowire
Researching optical effects in nanowires may require a high pump intensity which under
ambient conditions can degrade nanowires due to thermal oxidation. In this work we …
ambient conditions can degrade nanowires due to thermal oxidation. In this work we …
Mg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices
In this work, we have investigated the structural and electronic properties of Mg-doped GaAs
(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The …
(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The …
Enhanced electronic transport properties of Te roll-like nanostructures
ER Viana, N Cifuentes… - Beilstein Journal of …, 2022 - beilstein-journals.org
In this work, the electronic transport properties of Te roll-like nanostructures were
investigated in a broad temperature range by fabricating single-nanostructure back-gated …
investigated in a broad temperature range by fabricating single-nanostructure back-gated …
Mg-Doping of (111) B GaAs Thin Films Grown by Molecular Beam Epitaxy
H Limborco, FM Matinaga, MIN da Silva… - The Journal of …, 2019 - ACS Publications
In this work, the influence of the growth conditions in the incorporation of Mg p-type dopant
atoms in epitaxial GaAs (100) and (111) B thin films was investigated. Hall effect …
atoms in epitaxial GaAs (100) and (111) B thin films was investigated. Hall effect …