Recent progress in GeSn growth and GeSn-based photonic devices
J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
[HTML][HTML] Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
The absorption coefficient and refractive index of Ge 1− x Sn x alloys (x from 0% to 10%)
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …
Dark Current Analysis on GeSn pin Photodetectors
Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power
Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …
are highly coveted for the monolithic integration of silicon-based photonic and electronic …
[HTML][HTML] Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
D Stange, N Von Den Driesch, D Rainko… - Optics express, 2016 - opg.optica.org
We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …
Electrically injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms
An efficient electrically injected group-IV light source compatible with the complementary
metal-oxide-semiconductor (CMOS) process is the holy grail for realizing functional …
metal-oxide-semiconductor (CMOS) process is the holy grail for realizing functional …
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Double heterostructure Ge/Ge 1-x Sn x/Ge light-emitting diodes (LEDs) with 6% and 8% Sn
were grown on Si substrates using chemical vapor deposition. The electroluminescence …
were grown on Si substrates using chemical vapor deposition. The electroluminescence …
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
Thin-film Ge 0.9 Sn 0.1 structures were grown by reduced-pressure chemical vapor
deposition and were fabricated into photoconductors on Si substrates using a CMOS …
deposition and were fabricated into photoconductors on Si substrates using a CMOS …
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
Highly oriented Ge0. 81Sn0. 19 nanowires have been synthesized by a low-temperature
chemical vapor deposition growth technique. The nanostructures form by a self-seeded …
chemical vapor deposition growth technique. The nanostructures form by a self-seeded …