Hardware security and trust have become a pressing issue during the last two decades due
to the globalization of the semiconductor supply chain and ubiquitous network connection of …

Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trapping has long been made responsible for random telegraph and 1/f …

One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate.
In this work we analyze the single defects constituting NBTI. We introduce a new …

A blueprint for an atomistic approach to introducing time-dependent variability into a circuit
simulator in a realistic manner is demonstrated. The approach is based on previously …

It has recently been suggested that random telegraph noise (RTN) and the bias temperature
instability (BTI) are due to similar defects. Here we thoroughly analyze this hypothesis using …

We report extensive experimental results of the negative bias temperature instability (NBTI)
reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The …

The statistical distribution of negative bias temperature instability (NBTI) in deca-nanometer
p-channel FETs is discussed. An exponential distribution of threshold voltage shifts due to a …

Forthcoming technology nodes are posing major challenges on the manufacturing of
reliable (real-time) systems: process variations, accelerated degradation aging, as well as …

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor
field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic …