We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

We present an atomistic theoretical study of the temperature dependence of the competition
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …

In this work, we present a detailed analysis of the interplay of Coulomb effects and different
mechanisms that can lead to carrier-localization effects in c-plane (In, Ga) N/Ga N quantum …

InN-based III nitride quantum dot (QD) technology has attracted much attention for extended
potential applications in photonic devices covering a broad spectrum compared to …

We present here a combined experimental and theoretical analysis of the radiative
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …

Growth of InN nanowires have been carried out on quartz substrates at different
temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst …

Micro-LEDs can work under an extremely high injection level and are widely used in high-
brightness micro-displays and visible light communication. With the increase of carrier …

We report the direct generation of linearly polarized single photons with a deterministic
polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar …

In this work, we present a theoretical analysis of the built-in potential, the excitonic and
biexcitonic properties of non-polar InGaN/GaN quantum dots by means of self-consistent …

We report the successful realisation of intrinsic optical polarisation control by growth, in solid-
state quantum dots in the thermoelectrically cooled temperature regime (≥ 200 K), using a …