Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trapping has long been made responsible for random telegraph and 1/f …

In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …

Nonlinear fiber optics concerns with the nonlinear optical phenomena occurring inside
optical fibers. Although the field ofnonlinear optics traces its beginning to 1961, when a ruby …

One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

The ubiquity of threshold voltage relaxation is demonstrated in samples with both
conventional and high-k dielectrics following various stress conditions. A technique based …

Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …

A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …

Nitridation of the SiO 2/SiC interface yields a reduction in interface state density, immunity to
electron injection, as well as increased hole trapping. It is shown that the accumulation of …

This book will provide insight into the principles and applications of nonlinear effects in
fibers for students, researchers, and developers who have a basic understanding of …