Over the past few decades, magnetoelectric (ME) materials and devices have been
investigated extensively, which is one of the most interesting research topics since the …

ABSTRACT BiFeO3-CoFe2O4 (BFO-CFO) vertically aligned nanocomposite (VAN) thin-film
promises great potentials for next-generation electronic devices. Its strong magnetoelectric …

Flexible multiferroic heterostructures are promising to unveil technological developments in
wearable magnetic field sensing, nonvolatile memory, soft robotics, and portable energy …

Artificial synaptic devices that mimic the functions of biological synapses have drawn
enormous interest because of their potential in developing brain‐inspired computing …

The cross‐coupling between electric polarization and magnetization in multiferroic materials
provides a great potential for creating next‐generation memory devices. Current studies on …

In recent years, neuromorphic computing has been intensively investigated, to take over the
conventional or von Neumann scheme. Herein, the advantages of memristors as neurons …

Magnetoelectric materials that exhibit a large magnetoelectric response at room temperature
or higher are crucial for practical applications. However, the direct flip-flopping of magnetic …

Electric-field control of magnetism via an inverse magnetostrictive effect is an alternative
path toward improving energy-efficient storage and sensing devices based on a giant …

Abstract Undoped BiFeO 3 and Ni-doped BiFeO 3 nanostructures were synthesised via
colloidal gel, followed by a combustion reaction at a processing temperature of 500° C, for …

Utilization of magnetoelectric effects in multiferroic materials hold great potential to fabricate
nonvolatile memory devices with outstanding characteristics. In particular, organic thin …