Porous dielectrics in microelectronic wiring applications
V McGahay - Materials, 2010 - mdpi.com
Porous insulators are utilized in the wiring structure of microelectronic devices as a means of
reducing, through low dielectric permittivity, power consumption and signal delay in …
reducing, through low dielectric permittivity, power consumption and signal delay in …
Oxygen radical and plasma damage of low-k organosilicate glass materials: Diffusion-controlled mechanism for carbon depletion
MA Goldman, DB Graves, GA Antonelli… - Journal of Applied …, 2009 - pubs.aip.org
Fourier transform infrared (FTIR) analyses of low-k materials exposed to either oxygen
radicals or to capacitively coupled O 2 plasma indicate that carbon depletion from these …
radicals or to capacitively coupled O 2 plasma indicate that carbon depletion from these …
Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics
The damage induced by CO 2 and O 2 plasmas to an ultra low-k (ULK) dielectric film with a
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …
Damage of ultralow k materials during photoresist mask stripping process
X Hua, M Kuo, GS Oehrlein, P Lazzeri… - Journal of Vacuum …, 2006 - pubs.aip.org
Plasma-based ashing of photoresist masks after pattern transfer is a common processing
step in the fabrication of integrated circuits. In this work we investigated damage …
step in the fabrication of integrated circuits. In this work we investigated damage …
Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage
The resistance to plasma-induced damage of various nanoporous, ultra low-κ porous
SiCOH films used as interconnect dielectric materials in integrated circuits was studied …
SiCOH films used as interconnect dielectric materials in integrated circuits was studied …
Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralow k materials modifications
MS Kuo, X Hua, GS Oehrlein, A Ali, P Jiang… - Journal of Vacuum …, 2010 - pubs.aip.org
The authors evaluated photoresist (PR) stripping processes that are compatible with ultralow
dielectric constant (ULK) materials using H 2-based remote plasmas generated in an …
dielectric constant (ULK) materials using H 2-based remote plasmas generated in an …
Quantification of processing damage in porous low dielectric constant films
MR Baklanov, KP Mogilnikov, QT Le - Microelectronic Engineering, 2006 - Elsevier
A method for evaluation of degree of hydrophilization of low-k films occurred as a result of
technological processing damage is reported. The evaluation is based on analysis of …
technological processing damage is reported. The evaluation is based on analysis of …
Improved plasma resistance for porous low-k dielectrics by pore stuffing approach
The pore stuffing method is studied with the objective of improving the plasma induced
damage for porous organo-silicate glass low-k dielectrics. Experiments on blanket films …
damage for porous organo-silicate glass low-k dielectrics. Experiments on blanket films …
Roles of plasma-generated vacuum-ultraviolet photons and oxygen radicals in damaging nanoporous low-k films
J Lee, DB Graves - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
One important class of low-k materials used as interconnect dielectrics employs methyl
groups added to nanoporous SiO 2 matrices. These carbon-doped oxide materials are …
groups added to nanoporous SiO 2 matrices. These carbon-doped oxide materials are …
Effect of plasma treatments on a porous low-k material–Study of pore sealing
W Puyrenier, V Rouessac, L Broussous… - Microporous and …, 2007 - Elsevier
In microelectronics, porous low-k materials are needed for 65nm and beyond technology
nodes as insulator material between interconnections. During the integration, these low-k …
nodes as insulator material between interconnections. During the integration, these low-k …