Porous insulators are utilized in the wiring structure of microelectronic devices as a means of
reducing, through low dielectric permittivity, power consumption and signal delay in …

Fourier transform infrared (FTIR) analyses of low-k materials exposed to either oxygen
radicals or to capacitively coupled O 2 plasma indicate that carbon depletion from these …

The damage induced by CO 2 and O 2 plasmas to an ultra low-k (ULK) dielectric film with a
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …

Plasma-based ashing of photoresist masks after pattern transfer is a common processing
step in the fabrication of integrated circuits. In this work we investigated damage …

The resistance to plasma-induced damage of various nanoporous, ultra low-κ porous
SiCOH films used as interconnect dielectric materials in integrated circuits was studied …

The authors evaluated photoresist (PR) stripping processes that are compatible with ultralow
dielectric constant (ULK) materials using H 2-based remote plasmas generated in an …

A method for evaluation of degree of hydrophilization of low-k films occurred as a result of
technological processing damage is reported. The evaluation is based on analysis of …

The pore stuffing method is studied with the objective of improving the plasma induced
damage for porous organo-silicate glass low-k dielectrics. Experiments on blanket films …

One important class of low-k materials used as interconnect dielectrics employs methyl
groups added to nanoporous SiO 2 matrices. These carbon-doped oxide materials are …

In microelectronics, porous low-k materials are needed for 65nm and beyond technology
nodes as insulator material between interconnections. During the integration, these low-k …