[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
A review of quantum transport in field-effect transistors
DK Ferry, J Weinbub, M Nedjalkov… - Semiconductor …, 2022 - iopscience.iop.org
Confinement in small structures has required quantum mechanics, which has been known
for a great many years. This leads to quantum transport. The field-effect transistor has had …
for a great many years. This leads to quantum transport. The field-effect transistor has had …
Modeling thermal effects in nanodevices
In order to investigate the role of self-heating effects on the electrical characteristics of
nanoscale devices, we implemented a 2D Monte Carlo device simulator that includes the …
nanoscale devices, we implemented a 2D Monte Carlo device simulator that includes the …
Diffusive transport in quasi-2D and quasi-1D electron systems
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics.
Spatial confinement in these structures leads to formation of discrete low-dimensional …
Spatial confinement in these structures leads to formation of discrete low-dimensional …
Computing entries of the inverse of a sparse matrix using the FIND algorithm
An accurate and efficient algorithm, called fast inverse using nested dissection (FIND), for
computing non-equilibrium Green's functions (NEGF) for nanoscale transistors has been …
computing non-equilibrium Green's functions (NEGF) for nanoscale transistors has been …
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Simulations of up to 10 000 fully depleted thin-body silicon-on-insulator MOSFETs show that
the standard deviation of the threshold voltage cannot be adequately used as a sole metric …
the standard deviation of the threshold voltage cannot be adequately used as a sole metric …
Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized …
C Alexander, G Roy, A Asenov - IEEE transactions on electron …, 2008 - ieeexplore.ieee.org
A comprehensive simulation study of random-dopant-induced drain current variability is
presented for a series of well-scaled n-channel MOSFETs representative of the 90-, 65-, 45 …
presented for a series of well-scaled n-channel MOSFETs representative of the 90-, 65-, 45 …
3D finite element Monte Carlo simulations of multigate nanoscale transistors
M Aldegunde, AJ García-Loureiro… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
A 3D ensemble Monte Carlo device simulation tool with quantum corrections based on the
tetrahedral decomposition of a simulation domain has been developed for the modeling of …
tetrahedral decomposition of a simulation domain has been developed for the modeling of …
Quantum and Coulomb effects in nano devices
D Vasileska, HR Khan, SS Ahmed, G Kannan… - Nano-Electronic Devices …, 2011 - Springer
In state of the art devices, it is well known that quantum and Coulomb effects play significant
role on the device operation. In this book chapter we demonstrate that a novel effective …
role on the device operation. In this book chapter we demonstrate that a novel effective …
Electron mobility in β-Ga2O3: an ensemble Monte Carlo study
Numerical simulations are performed to evaluate electron mobility in β-Ga 2 O 3. Following
scattering mechanisms were found to be important: acoustic deformation potential, ionized …
scattering mechanisms were found to be important: acoustic deformation potential, ionized …