The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

We report the observation of mid-infrared room-temperature electroluminescence from a pin
Ge/Ge 0.922 Sn 0.078/Ge double heterostructure diode. The device structure is grown using …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Spin orientation of photoexcited carriers and their energy relaxation are investigated in bulk
Ge by studying spin-polarized recombination across the direct band gap. The control over …

The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers
has enabled the integration of multi-quantum well structures in silicon photonics chips for …

The room temperature photoluminescence from Ge nanopillars has been extended from 1.6
μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride …

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced
chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm …

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and
unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320× …

Band structures of tensile strained and n+ doped Ge/GeSi quantum wells (QWs) are
calculated by multiple-band k· p method. The energy dispersion curves of the Γ and L …