Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen
is investigated by photocurrent generation in the telecommunication range. The …
is investigated by photocurrent generation in the telecommunication range. The …
Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths
Recent advancements in quantum key distribution (QKD) protocols opened the chance to
exploit nonlaser sources for their implementation. A possible solution might consist in …
exploit nonlaser sources for their implementation. A possible solution might consist in …
Single Ion implanted silicon devices towards few photons emission regime for space quantum communications
E Prati, T Shinada, T Tanii - Quantum 2.0, 2020 - opg.optica.org
Single Ion Implanted Silicon Devices Towards Few Photons Emission Regime For Space
Quantum Communications Page 1 QTh7B.10.pdf Quantum 2.0 Conference 2020 © OSA 2020 …
Quantum Communications Page 1 QTh7B.10.pdf Quantum 2.0 Conference 2020 © OSA 2020 …
Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature
E Prati, M Celebrano, L Ghirardini… - 2019 Silicon …, 2019 - ieeexplore.ieee.org
We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-
scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks …
scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks …