A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
[HTML][HTML] Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
[HTML][HTML] Donors and deep acceptors in β-Ga2O3
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
Intrinsic electron mobility limits in β-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
[HTML][HTML] Gallium oxide nanostructures: A review of synthesis, properties and applications
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …
Laser sintering of liquid metal nanoparticles for scalable manufacturing of soft and flexible electronics
Soft, flexible, and stretchable electronics are needed to transmit power and information, and
track dynamic poses in next-generation wearables, soft robots, and biocompatible devices …
track dynamic poses in next-generation wearables, soft robots, and biocompatible devices …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
First-principles study of the structural, electronic, and optical properties of in its monoclinic and hexagonal phases
We report the results of a comprehensive study on the structural, electronic, and optical
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …