Recent successful integration of semiconductors into spintronic THz emitters has
demonstrated a new pathway of control over terahertz (THz) radiation through ultrafast …

We investigate the impact of spin torque and spin pumping on the surface magnon polariton
dispersion in a antiferromagnetic insulator-semiconductor heterostructure. In the bilayer …

The ongoing process of the miniaturization of spintronics and magnetic-films-based devices,
as well as a growing necessity for basic material research place stringent requirements on …

Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building
blocks of state-of-the-art devices employed for active cooling and energy-saving lightning …

The ultrafast manipulation of spin in ferromagnet-semiconductor (FM/SC) heterojunctions is
a key issue for advancing spintronics, where magnetic damping and interfacial spin …

Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the
study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by …

Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will
enable spin-controlled transport and photonic phenomena, seeding ideas for functional …

Magnetic nanocrystals embedded in a semiconducting matrix are gaining increasing
attention for potential applications in spintronic devices. We report about the magnetic …

Schottky barrier height and the ideality factor η are established for the first time in the single
phase (Ga, Mn) N using a vertical geometry device. The material has been heteroepitaxially …

The family of III-nitrides represents the building block of a variety of state-of-the-art (opto-)
electronic devices, and the interest in this material system, from both industry and academia …