Adaptive read thresholds for NAND flash

B Peleato, R Agarwal, JM Cioffi, M Qin… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
A primary source of increased read time on NAND flash comes from the fact that, in the
presence of noise, the flash medium must be read several times using different read …

Snake-in-the-box codes for rank modulation

Y Yehezkeally, M Schwartz - IEEE Transactions on Information …, 2012 - ieeexplore.ieee.org
Motivated by the rank-modulation scheme with applications to flash memory, we consider
Gray codes capable of detecting a single error, also known as snake-in-the-box codes. We …

Codes for network switches

Z Wang, O Shaked, Y Cassuto… - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
A network switch routes data packets between its multiple input and output ports. Packets
from input ports are stored upon arrival in a switch fabric comprising multiple memory banks …

Channel coding methods for non-volatile memories

L Dolecek, F Sala - Foundations and Trends® in …, 2016 - nowpublishers.com
Non-volatile memories (NVMs) have emerged as the primary replacement of hard-disk
drives for a variety of storage applications, including personal electronics, mobile computing …

Trade-offs between instantaneous and total capacity in multi-cell flash memories

EE Gad, A Jiang, J Bruck - 2012 IEEE International Symposium …, 2012 - ieeexplore.ieee.org
The limited endurance of flash memories is a major design concern for enterprise storage
systems. We propose a method to increase it by using relative (as opposed to fixed) cell …

Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage

A Jiang, EE Gad, J Bruck - US Patent 9,230,652, 2016 - Google Patents
Rank modulation has been recently proposed as a scheme for storing information in flash
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …

Rank-modulation rewriting codes for flash memories

EE Gad, E Yaakobi, AA Jiang… - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
Current flash memory technology is focused on cost minimization of the stored capacity.
However, the resulting approach supports a relatively small number of write-erase cycles …

Rank-modulation rewriting codes for flash memories

A Jiang, EE Gad, J Bruck, E Yaakobi - US Patent 9,086,955, 2015 - Google Patents
Rank modulation has been recently proposed as a scheme for storing information in flash
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …

Data storage based on rank modulation in single-level flash memory

E Kan - US Patent 9,772,935, 2017 - Google Patents
US9772935B2 - Data storage based on rank modulation in single-level flash memory - Google
Patents US9772935B2 - Data storage based on rank modulation in single-level flash memory …

Parallel programming of rank modulation

M Qin, AA Jiang, PH Siegel - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
Rank modulation is a technique for representing stored information in an ordered set of flash
memory cells by a permutation that reflects the ranking of their voltage levels. In this paper …