Adaptive read thresholds for NAND flash
A primary source of increased read time on NAND flash comes from the fact that, in the
presence of noise, the flash medium must be read several times using different read …
presence of noise, the flash medium must be read several times using different read …
Snake-in-the-box codes for rank modulation
Y Yehezkeally, M Schwartz - IEEE Transactions on Information …, 2012 - ieeexplore.ieee.org
Motivated by the rank-modulation scheme with applications to flash memory, we consider
Gray codes capable of detecting a single error, also known as snake-in-the-box codes. We …
Gray codes capable of detecting a single error, also known as snake-in-the-box codes. We …
Codes for network switches
A network switch routes data packets between its multiple input and output ports. Packets
from input ports are stored upon arrival in a switch fabric comprising multiple memory banks …
from input ports are stored upon arrival in a switch fabric comprising multiple memory banks …
Channel coding methods for non-volatile memories
Non-volatile memories (NVMs) have emerged as the primary replacement of hard-disk
drives for a variety of storage applications, including personal electronics, mobile computing …
drives for a variety of storage applications, including personal electronics, mobile computing …
Trade-offs between instantaneous and total capacity in multi-cell flash memories
The limited endurance of flash memories is a major design concern for enterprise storage
systems. We propose a method to increase it by using relative (as opposed to fixed) cell …
systems. We propose a method to increase it by using relative (as opposed to fixed) cell …
Flash memories using minimum push up, multi-cell and multi-permutation schemes for data storage
Rank modulation has been recently proposed as a scheme for storing information in flash
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …
Rank-modulation rewriting codes for flash memories
Current flash memory technology is focused on cost minimization of the stored capacity.
However, the resulting approach supports a relatively small number of write-erase cycles …
However, the resulting approach supports a relatively small number of write-erase cycles …
Rank-modulation rewriting codes for flash memories
Rank modulation has been recently proposed as a scheme for storing information in flash
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …
memories. Three improved aspects are disclosed. In one aspect the minimum push-up …
Data storage based on rank modulation in single-level flash memory
E Kan - US Patent 9,772,935, 2017 - Google Patents
US9772935B2 - Data storage based on rank modulation in single-level flash memory - Google
Patents US9772935B2 - Data storage based on rank modulation in single-level flash memory …
Patents US9772935B2 - Data storage based on rank modulation in single-level flash memory …
Parallel programming of rank modulation
Rank modulation is a technique for representing stored information in an ordered set of flash
memory cells by a permutation that reflects the ranking of their voltage levels. In this paper …
memory cells by a permutation that reflects the ranking of their voltage levels. In this paper …