Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer
Y Hou, D Zhao, F Liang, Z Liu, J Yang… - Optical Materials …, 2021 - opg.optica.org
To obtain high performance of GaN-based laser diodes (LDs), three series of LDs are
proposed, the effects of Al content of p-AlGaN cladding layer, as well as the material …
proposed, the effects of Al content of p-AlGaN cladding layer, as well as the material …
[HTML][HTML] Effects of different current confinement layers in GaN-based VCSELs
YH Chen, Y Mei, ZM Zheng, RB Xu, YC Wang, LY Ying… - AIP Advances, 2023 - pubs.aip.org
For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current
confinement layer is essential for high-performance devices. The effect of different current …
confinement layer is essential for high-performance devices. The effect of different current …
Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance
Y Gao, C Chu, S Hang, Y Zhang, ZH Zhang… - Optical Materials …, 2021 - opg.optica.org
Hole injection is one of the fundamental limitations that affect the lasing power for GaN-
based vertical-cavity surface-emitting lasers (VCSELs). In this report, a GaN-based VCSEL …
based vertical-cavity surface-emitting lasers (VCSELs). In this report, a GaN-based VCSEL …