An electronic silicon-based memristor with a high switching uniformity

Y Lu, A Alvarez, CH Kao, JS Bow, SY Chen… - Nature Electronics, 2019 - nature.com
Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale
conductivity and are of interest in the development of non-volatile random access memory …

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory …

DJJ Loy, PA Dananjaya, S Chakrabarti… - ACS Applied …, 2020 - ACS Publications
We report a switching model that directly explains the change in activation energy (E AC) at
different RESET stop voltages (V stop) in HfO2-based resistive random access memory …

Annealing effect on forming-free bipolar resistive switching characteristics of sol-gel WOx resistive memories with Al conductive bridges

CC Hsu, H Chuang, WC Jhang - Journal of Alloys and Compounds, 2021 - Elsevier
This paper studies the annealing-temperature dependent resistive switching (RS) behavior
of forming-free Al/WO x/ITO memories, where the WO x active layers were prepared using a …

Al2O3 interfacial layer derived hybrid conductive filament for the reliability enhancement of Ta2O5-based resistive random access memory

SW Han, MW Shin - Journal of Alloys and Compounds, 2023 - Elsevier
This study used an Al 2 O 3 interfacial layer to improve the reliability characteristics of Ag/Ta
2 O 5/Au resistive random access memory (RRAM), such as endurance and retention. The …

Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices

NC Das, M Kim, JR Rani, SM Hong, JH Jang - Nanoscale, 2022 - pubs.rsc.org
This study investigates the temperature-independent switching characteristics of magnesium
fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K …

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2-based resistive switching memory for …

SA Khan, S Kim - RSC advances, 2020 - pubs.rsc.org
Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device
depending on the compliance current, the sweep voltage amplitude, and the bias polarity …

Annealing effect on the performance of copper oxide resistive memory devices

CC Hsu, YS Lin, CW Cheng… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, the annealing effect on resistive switching (RS) characteristics of
Al/CuO/indium tin oxide (ITO) resistive random access memory (RRAM) devices is …

Resistive memories (RRAM) variability: challenges and solutions

G Molas, G Sassine, C Nail, DA Robayo… - ECS …, 2018 - iopscience.iop.org
In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate
various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb …

DC electrical degradation of YSZ: voltage‐controlled electrical metallization of a fast ion conducting insulator

A Alvarez, Y Dong, IW Chen - Journal of the American Ceramic …, 2020 - Wiley Online Library
DC electrical degradation as a form of dielectric and resistance breakdown is common in
thin‐film devices including resistance‐switching memory. To obtain design data and to …

In memory energy application for resistive random access memory

P Trotti, S Oukassi, G Molas, M Bernard… - Advanced Electronic …, 2021 - Wiley Online Library
This work explores the innovative concept of a hybrid dual‐behavior device, based on
emerging nonvolatile memory technology, for both data retention and energy storage …