Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale
conductivity and are of interest in the development of non-volatile random access memory …

We report a switching model that directly explains the change in activation energy (E AC) at
different RESET stop voltages (V stop) in HfO2-based resistive random access memory …

This paper studies the annealing-temperature dependent resistive switching (RS) behavior
of forming-free Al/WO x/ITO memories, where the WO x active layers were prepared using a …

This study used an Al 2 O 3 interfacial layer to improve the reliability characteristics of Ag/Ta
2 O 5/Au resistive random access memory (RRAM), such as endurance and retention. The …

This study investigates the temperature-independent switching characteristics of magnesium
fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K …

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device
depending on the compliance current, the sweep voltage amplitude, and the bias polarity …

In this article, the annealing effect on resistive switching (RS) characteristics of
Al/CuO/indium tin oxide (ITO) resistive random access memory (RRAM) devices is …

In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate
various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb …

DC electrical degradation as a form of dielectric and resistance breakdown is common in
thin‐film devices including resistance‐switching memory. To obtain design data and to …

This work explores the innovative concept of a hybrid dual‐behavior device, based on
emerging nonvolatile memory technology, for both data retention and energy storage …