We investigate the digital, analog/RF, and linearity performance of four CP FinFETs
distinguished by spacer layers:(i) single low-k spacer on both sides of the gate (D 1),(ii) …

This work investigates the performance of the inverted-T (IT) junctionless (JL) FinFET with
selective buried oxide (SELBOX) topology. The electrical characteristics of SELBOX-ITJL …

This study gives an insight of junctionless FinFET device, by targeting sensitivity of device
analog performance metrics with respect to geometrical variations. Effect of geometrical …

Today, the most common and challenging fabrication step of a semiconductor device is the
formation of junctions. At technology nodes below 20 nm, the formation of super-steep …

Using well‐calibrated device simulation, the analogue performance of 20 nm double‐gate
junctionless transistors (JLTs) is investigated in terms of transconductance (gm), output …

We propose a novel single gate fully depleted planar bi-layer junctionless transistor (BJLT).
This device is made from two layers of semiconductor (n and p-type) on an insulator using …