Tin telluride quantum dot thin films: size dependent structural, optical and electrical properties
IA Mahdy, EA Mahmoud, MA Mahdy - Materials Science in Semiconductor …, 2021 - Elsevier
In the current study, efforts have been made to acquire tin telluride quantum dot (QD) thin
films that work at room temperature and in the region of visible and near-infrared (NIR) …
films that work at room temperature and in the region of visible and near-infrared (NIR) …
Solution synthesis and optical properties of SnTe nanocrystals
Y Xu, N Al-Salim, JM Hodgkiss… - Crystal growth & design, 2011 - ACS Publications
A facile approach has been developed for the synthesis of SnTe nanocrystals using
triethanolamine as the stabilizing agent. The size of SnTe nanoparticles can be readily …
triethanolamine as the stabilizing agent. The size of SnTe nanoparticles can be readily …
Unveiling the optoelectronic characteristics of SnTe thin films: An extensive investigation via structural & photoresponse analysis of drop-cast deposition
Thin film on a glass slide substrate of tin telluride (SnTe) is deposited at room temperature
by drop casting method. The thin films are thoroughly characterized. The study by diffraction …
by drop casting method. The thin films are thoroughly characterized. The study by diffraction …
Investigations of photo-transient properties and applications as photosensors in well-characterized tin telluride (SnTe) single crystal
The current scenario demands new semiconducting materials for the development of fast-
reacting sensors, detectors, and special solid-state devices. On the way to finding a solution …
reacting sensors, detectors, and special solid-state devices. On the way to finding a solution …
Preparation of SnTe thin films on Au (1 1 1) by electrodeposition route
İ Şişman, H Öz - Electrochimica acta, 2011 - Elsevier
Tin telluride (SnTe) thin films were deposited onto Au (1 1 1) substrates from an aqueous
solution containing SnCl 2, TeO 2, and C 6 H 5 Na 3 at room temperature (25° C) for the first …
solution containing SnCl 2, TeO 2, and C 6 H 5 Na 3 at room temperature (25° C) for the first …
Preparation and characterization of screen-printed SnS0.5Se0.5 alloy films
In present investigation, tin sulphoselenide (SnS 0.5 Se 0.5) thick films were deposited on
glass substrate by simple and economical screen-printing method followed by sintering …
glass substrate by simple and economical screen-printing method followed by sintering …
Non-monotonic pressure dependence of band gap in SnTe
W Li, Q He, J Chen, Z Pan, T Wang - Chemical Physics Letters, 2014 - Elsevier
The electronic properties of SnTe under pressure are studied using first-principles
calculations. The results show that the band gap energy changes non-monotonically with …
calculations. The results show that the band gap energy changes non-monotonically with …
Preparation and characterization of tin sulphide thin films grown by screen-printing method
Tin sulphide films have been deposited by screen-printing method on ultra-clean glass
substrate. Tin sulphide and stannic chloride have been used as the basic source material …
substrate. Tin sulphide and stannic chloride have been used as the basic source material …
Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications
Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical
alloying and its film was deposited on glass substrates by the economically and …
alloying and its film was deposited on glass substrates by the economically and …
Evaluation of the electron–TO–phonon interaction in polar crystals from experimental data
A Pishtshev - Physica B: Condensed Matter, 2010 - Elsevier
The aim of this study was to determine the strengths of the coupling of electrons with the
polar long-wavelength transverse optical (TO) vibrations from infrared spectroscopy data …
polar long-wavelength transverse optical (TO) vibrations from infrared spectroscopy data …