Directed self-assembly (DSA) of block copolymers (BCPs) on lithographically defined
chemically nanopatterned surfaces (or chemical patterns) combines advantages of …

Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is
a promising approach for sub-10-nm surface patterning. DSA requires the control of …

In the past few years, novel methods of patterning have made considerable progress. In
2011, extreme ultraviolet (EUV) lithography was the front runner to succeed optical …

Directed Self-Assembly (DSA) is one of the most promising technologies for scaling feature
sizes to 16 nm and below. Both line/space and hole patterns can be created with various …

In order to evaluate process performances of directed self-assembly (DSA) lithography for
semiconductor device manufacturing, we developed a novel simple sub-15 nm line-and …

Guiding pattern portions are formed on a surface of a lithographic material stack that is
disposed on a surface of a semiconductor substrate. A copolymer layer is then formed …

Diminishing error tolerance renders the customization of patterns created through directed
self-assembly (DSA) extremely challenging at tighter pitch. A self-aligned customization …

Patterning at 10 nm and sub-10 nm technology nodes is one of the key challenges for the
semiconductor industry. Several patterning techniques are under investigation to enable the …

As an emerging developing technique for next-generation lithography, directed self-
assembly (DSA) of block copolymer (BCP) has attracted numerous attention and has been a …

Background: Finding optimal processing conditions to reduce defectivity is a major
challenge in high-resolution lithographic tools such as directed self-assembly and extreme …