For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …

Atomic Layer Deposition: An Overview | Chemical Reviews ACS ACS Publications C&EN CAS
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …

This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …