Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
Atomic layer deposition: an overview
SM George - Chemical reviews, 2010 - ACS Publications
Atomic Layer Deposition: An Overview | Chemical Reviews ACS ACS Publications C&EN CAS
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …
Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …