Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

Covering state-of-the-art advances, novel applications, and future perspectives, this volume
presents new directions on the basic studies of charged particle and photon interactions with …

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for
harsh environment application have been studied extensively and reviewed in this article …

In this article we report the fabrication and characterization of large area, room-temperature
operable and very high resolution Schottky barrier detectors for alpha particles using 20 μm …

Since its development in the early 1990's, ion beam induced charge (IBIC) microscopy has
found widespread applications in many microprobe laboratories for the analysis of …

We report a high photocurrent-to-dark current ratio (PDCR) of observed in Mo/4H-SiC
Schottky barrier diodes (SBDs) in self-biased mode when exposed to a 1.5 mW ultraviolet …

Electron-hole pair creation energy (ε) has been determined from alpha spectroscopy using
4H-SiC epitaxial layer Schottky detectors and a pulser calibration technique. We report an …

While CdZnTe (CZT) is one of the best materials for room-temperature radiation detection,
they are not quite suitable for high-temperature or harsh-environment applications. This …

We report the fabrication of novel self-biased high resolution radiation detectors achieved in
n-type 4H-SiC metal-oxide-semiconductor (MOS) devices. Vertical MOS structure has been …

Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm
thick n-type 4H-SiC epitaxial layers containing Z 1/2, EH 5, and Ci1 deep levels were …