Optimizing device dimensions for dual material junctionless tree-FET: a path to improved analog/RF performance
D Beebireddy, K Fatima - ECS Journal of Solid State Science …, 2024 - iopscience.iop.org
This comprehensive study delves into the intricate analysis of the electrical and analog/RF
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
A 2-D modeling of Fe doped dual material gate AlGaN/AlN/GaN high electron mobility transistors for high frequency applications
K Sowmya, NB Balamurugan, V Parvathy - AEU-International Journal of …, 2019 - Elsevier
The prototype of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility
Transistors (HEMTs) developed by a Finite Difference Method (FDM) is addressed in this …
Transistors (HEMTs) developed by a Finite Difference Method (FDM) is addressed in this …
Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications
The numerical model for AlGaN/GaN High Electron Mobility Transistors (HEMTs) device of
Zero-Dimensional Freestanding Nanowire Field-Effect Rectifiers (NW-FER) is developed by …
Zero-Dimensional Freestanding Nanowire Field-Effect Rectifiers (NW-FER) is developed by …
Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method
S Kandasamy, B NB - International Journal of Numerical …, 2019 - Wiley Online Library
A model for a dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor has been
developed by a finite difference method. The method permits the modeling of dual material …
developed by a finite difference method. The method permits the modeling of dual material …