Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç - Journal of applied physics, 2005 - pubs.aip.org
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
APPLIED PHYSICS REVIEWS
MA Reshchikov, H Morkoç, HW Choi, E Gu… - Journal of Applied …, 2005 - pubs.aip.org
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The mechanisms of thermal engineered laser shock peening for enhanced fatigue performance
Thermal engineered laser shock peening (LSP) is a technique combining warm laser shock
peening (WLSP) with subsequent post-shock tempering treatment to optimize the surface …
peening (WLSP) with subsequent post-shock tempering treatment to optimize the surface …
Ultra-low dark current AlGaN-based solar-blind metal–semiconductor–metal photodetectors for high-temperature applications
F Xie, H Lu, D Chen, X Ji, F Yan, R Zhang… - IEEE Sensors …, 2012 - ieeexplore.ieee.org
Solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) with Ni/Au semi-
transparent interdigitated contact electrodes are fabricated on Al 0.4 Ga 0.6 N epi-layer …
transparent interdigitated contact electrodes are fabricated on Al 0.4 Ga 0.6 N epi-layer …
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
The electrical characteristics of Schottky contacts on individual threading dislocations (TDs)
with a screw-component in GaN substrates and the structures of these TDs were …
with a screw-component in GaN substrates and the structures of these TDs were …
[图书][B] Handbook of nanophysics: nanoelectronics and nanophotonics
KD Sattler - 2010 - taylorfrancis.com
Many bottom-up and top-down techniques for nanomaterial and nanostructure generation
have enabled the development of applications in nanoelectronics and nanophotonics …
have enabled the development of applications in nanoelectronics and nanophotonics …
Carrier Diffusion in : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations
We investigate the impact of threading dislocations with an edge component (a or a+ c type)
on carrier recombination and diffusion in Ga N (0001) layers close to the surface as well as …
on carrier recombination and diffusion in Ga N (0001) layers close to the surface as well as …
Dislocation pinning effects induced by nano-precipitates during warm laser shock peening: Dislocation dynamic simulation and experiments
Warm laser shock peening (WLSP) is a new high strain rate surface strengthening process
that has been demonstrated to significantly improve the fatigue performance of metallic …
that has been demonstrated to significantly improve the fatigue performance of metallic …
Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors
Abstract Metal Semiconductor Metal (MSM) photodetector devices based on metal organic
chemical vapour deposition grown InGaN/GaN heterostructures with Ni/Au contacts has …
chemical vapour deposition grown InGaN/GaN heterostructures with Ni/Au contacts has …
Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor …
Correlations between the structural properties and nonradiative recombination (NRR)
behaviors of threading dislocations in freestanding hydride-vapor-phase-epitaxy (HVPE) …
behaviors of threading dislocations in freestanding hydride-vapor-phase-epitaxy (HVPE) …