Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear
optical coefficients, and uncommon interband optical selection rules, making it interesting for …

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman,
photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence …

Gallium selenide (GaSe) is one of the layered group-III metal monochalcogenides, which
has an indirect bandgap in the monolayer and a direct bandgap in bulk unlike other …

Gallium selenide (GaSe) has recently emerged as a unique platform due to its exciting
properties, namely, large and fast photo-response, high carrier mobility and non-linear …

The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by
humidity. We have observed that the presence of water molecules leads to formation of Ga 2 …

GaSxSe1− x solid solutions are layered semiconductors with a band gap between 2.0 and
2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with …

With the development of high-power infrared lasers and optical devices based on GaSe,
more attention has been paid to its optical damage under laser irradiation. Understanding …

The main application area for GaSe crystals is nonlinear optics, but there are problems with
machining and antireflection coatings due to the layered structure of GaSe. Large GaSe …

β-Ga2O3 nanowires were grown by thermal oxidation of GaSe single crystal surface under a
mixture of argon–air flow, without the presence of a catalyst or foreign substrate. The …

We report a dual-junction strategy for fabricating a high-performance In 2 Se x O y/In 2 Se
3/Si heterojunction photodiode by oxidizing the epitaxial In 2 Se 3 thin films. The device …