The physical mechanisms underlying RF current-collapse effects in AlGaN-GaN high-
electron-mobility transistors are investigated by means of measurements and numerical …

Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a
large extent affected by the buffer design, which, in this paper, is varied using different levels …

AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using
capacitance-frequency-temperature (CfT) mapping. Applying sputtering-deposited AlN, we …

In this letter, the effects of the interface acceptor-like traps on the transient responses of
AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of …

GaN‐based power amplifiers for RF, microwave, and millimeter‐wave applications are now
available in the market, and compact GaN‐based power converters are currently entering …

New constant drain-current deep level optical/transient spectroscopy (CI D-DLTS/DLOS)
methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility …

A cryogenic investigation of the Kink effect with drain-source bias sweeping process during
output characteristics is suggested. An exhaustive study of the field effect dependence on …

The characteristics of transient temperature under the pulse on and cycle pulse mode are
studied for GaN-based HEMT. The increase of channel transient temperature under pulse …

Power diodes or transistors must be able to work in high voltage/high current use, for
instance in AC/DC converters. However, in such aggressive conditions trapping effects can …

Trapping effects were evaluated by means of pulsed measurements under different
quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an …