Quantitative characterization of nanometer-scale electric fields via momentum-resolved STEM
Most of today's electronic devices, like solar cells and batteries, are based on nanometer-
scale built-in electric fields. Accordingly, characterization of fields at such small scales has …
scale built-in electric fields. Accordingly, characterization of fields at such small scales has …
Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
Scanning transmission electron microscopy (STEM) allows to gain quantitative information
on the atomic-scale structure and composition of materials, satisfying one of todays major …
on the atomic-scale structure and composition of materials, satisfying one of todays major …
Effects of Electron Microscope Parameters and Sample Thickness on High Angle Annular Dark Field Imaging
P Yang, Z Li, Y Yang, R Li, L Qin, Y Zou - Scanning, 2022 - Wiley Online Library
Scanning transmission electron microscopy (STEM) developed into a very important
characterization tool for atomic analysis of crystalline specimens. High‐angle annular dark …
characterization tool for atomic analysis of crystalline specimens. High‐angle annular dark …
Ingrained: An automated framework for fusing atomic‐scale image simulations into experiments
To fully leverage the power of image simulation to corroborate and explain patterns and
structures in atomic resolution microscopy, an initial correspondence between the simulation …
structures in atomic resolution microscopy, an initial correspondence between the simulation …
Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn) As/Ga (AsSb)/(GaIn) As-
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
The angle-resolved electron scattering is investigated in scanning-transmission electron
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination
In this paper, a methodology is presented to count the number of atoms in heterogeneous
nanoparticles based on the combination of multiple annular dark field scanning transmission …
nanoparticles based on the combination of multiple annular dark field scanning transmission …
Ge/SiGe parabolic quantum wells
Quantum wells with parabolic confining potentials allow the realization of semiconductor
heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here …
heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here …
Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures
O Maßmeyer, J Belz, BO Dogahe… - Advanced Materials …, 2024 - Wiley Online Library
Abstract 2D materials have received a lot of interest over the past decade. Especially van
der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their …
der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their …