We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

We discuss the fine structure and spin dynamics of spin‐3/2 centers associated with silicon
vacancies in silicon carbide. The centers have optically addressable spin states which …

Results of experiments are presented that suggest that the Si vacancy in SiC is a promising
quantum system for single-defect and single-photon spectroscopy in the infrared region. The …

Quantum systems can provide outstanding performance in various sensing applications,
ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very …

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-
SiC 28) and reveal not yet considered terms in the spin Hamiltonian, originated from the …

The diffusion of intrinsic defects in 3 C− SiC is studied using an ab initio method based on
density functional theory. The vacancies are shown to migrate on their own sublattice. The …

With low energy electron irradiation in the 80–250 keV range, we were able to create only
those intrinsic defects related to the initial displacements of carbon atoms in the silicon …

Silicon carbide nanoparticles (SiC nps) were modified by changing the injection amount
using 1 MeV high-energy electron as radiation source. When the injection volume reaches …

The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio
method based on density-functional theory. The interstitial-vacancy recombination, the …

The TV 2 a center, which was suggested to be the excited triplet state (S= 1) of the neutral
silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron …