In this paper, the single-event effects of Schottky contact super barrier rectifier (SSBR) and
conventional super barrier rectifier (SBR) as comparison structure are simulated and …

In this article, a new silicon power Schottky source MOSFET (S-MOS) architecture is
proposed by introducing an integrated retrograde p-well Schottky contact super barrier …

Single event gate rupture (SEGR) analysis was performed on a vertical double diffused
metal oxide semiconductor field effect transistor (VDMOS) in which high energy charged …

In this research, an examination of a single event gate rupture (SEGR) of an insulated gate
bipolar transistor (IGBT), caused by a heavy ion striking the device at normal incidence on …

This work presents SJ-VDMOS with buffer and gate stacking of silicon nitride. The proposed
engineering (Sio2/Si 3 N 4 gate stack) improves the Si/Sio2 interface Electric field nearly by …

A novel structure of retrograde p-well Schottky source MOSFET with integrated Si/SiGe
heterojunction diode (RP-HJD-S-MOS) is proposed by introducing a p-SiGe region at the …

This article involved doing an analysis on the Insulated Gate Bipolar Transistor (IGBT) Using
Wideband gap Materials. The investigation focused on increase the Performance of the …

In today's semiconductor devices demands are increasing day by day in consumer
electronics. For example, IoT back bone of current consumer electronics. Everything is …