Emergent properties in supercrystals of atomically precise nanoclusters and colloidal nanocrystals
We provide a comprehensive account of the optical, electrical and mechanical properties
that emerge from the self-assembly of colloidal nanocrystals or atomically precise …
that emerge from the self-assembly of colloidal nanocrystals or atomically precise …
Quantum teleportation with imperfect quantum dots
F Basso Basset, F Salusti, L Schweickert… - npj Quantum …, 2021 - nature.com
Efficient all-photonic quantum teleportation requires fast and deterministic sources of highly
indistinguishable and entangled photons. Solid-state-based quantum emitters—notably …
indistinguishable and entangled photons. Solid-state-based quantum emitters—notably …
Quantum entanglement creation based on quantum scattering in one-dimensional waveguides
GZ Song, MJ Tao, J Qiu, HR Wei - Physical Review A, 2022 - APS
We propose two heralded schemes for generating multipartite Greenberger-Horne-Zeilinger
(GHZ) and W states. They are realized by photon scattering in one-dimensional waveguides …
(GHZ) and W states. They are realized by photon scattering in one-dimensional waveguides …
Heralded quantum gates for hybrid systems via waveguide-mediated photon scattering
Universal quantum gates play a critical role in quantum information processing. Here, based
on the scattering property of photons off single emitters in one-dimensional waveguides, we …
on the scattering property of photons off single emitters in one-dimensional waveguides, we …
Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces
Advancements in photonic quantum information systems (QIS) have driven the development
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …
Droplet epitaxy quantum dot based infrared photodetectors
The fabrication and characterization of an infrared photodetector based on GaAs droplet
epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported. The high control …
epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported. The high control …
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature
Long wavelength infrared devices, despite growing interest due to a wide range of
applications in commercial, public, and academic sectors, are still struggling to achieve …
applications in commercial, public, and academic sectors, are still struggling to achieve …
[HTML][HTML] Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …
Local droplet etching of a vicinal InGaAs (111) A metamorphic layer
We demonstrated nanopit formation by Ga-assisted local droplet etching technique in
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …