Emergent properties in supercrystals of atomically precise nanoclusters and colloidal nanocrystals

KS Sugi, A Maier, M Scheele - Chemical Communications, 2022 - pubs.rsc.org
We provide a comprehensive account of the optical, electrical and mechanical properties
that emerge from the self-assembly of colloidal nanocrystals or atomically precise …

Quantum teleportation with imperfect quantum dots

F Basso Basset, F Salusti, L Schweickert… - npj Quantum …, 2021 - nature.com
Efficient all-photonic quantum teleportation requires fast and deterministic sources of highly
indistinguishable and entangled photons. Solid-state-based quantum emitters—notably …

Quantum entanglement creation based on quantum scattering in one-dimensional waveguides

GZ Song, MJ Tao, J Qiu, HR Wei - Physical Review A, 2022 - APS
We propose two heralded schemes for generating multipartite Greenberger-Horne-Zeilinger
(GHZ) and W states. They are realized by photon scattering in one-dimensional waveguides …

Heralded quantum gates for hybrid systems via waveguide-mediated photon scattering

GZ Song, JL Guo, Q Liu, HR Wei, GL Long - Physical Review A, 2021 - APS
Universal quantum gates play a critical role in quantum information processing. Here, based
on the scattering property of photons off single emitters in one-dimensional waveguides, we …

Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces

PP Iyer, S Prescott, S Addamane, H Jung… - Nano Letters, 2024 - ACS Publications
Advancements in photonic quantum information systems (QIS) have driven the development
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …

Droplet epitaxy quantum dot based infrared photodetectors

S Vichi, S Bietti, A Khalili, M Costanzo… - …, 2020 - iopscience.iop.org
The fabrication and characterization of an infrared photodetector based on GaAs droplet
epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported. The high control …

Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature

S Vichi, S Asahi, S Bietti, A Tuktamyshev… - ACS …, 2024 - ACS Publications
Long wavelength infrared devices, despite growing interest due to a wide range of
applications in commercial, public, and academic sectors, are still struggling to achieve …

[HTML][HTML] Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

IS Han, YR Wang, M Hopkinson - Applied Physics Letters, 2021 - pubs.aip.org
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …

Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2

A Tuktamyshev, S Vichi, S Bietti, A Fedorov… - Crystal Growth & …, 2024 - ACS Publications
We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …

Local droplet etching of a vicinal InGaAs (111) A metamorphic layer

A Tuktamyshev, D Lambardi, S Vichi, F Cesura… - Applied Surface …, 2024 - Elsevier
We demonstrated nanopit formation by Ga-assisted local droplet etching technique in
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …