A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
Yellow–red emission from (Ga, In) N heterostructures
B Damilano, B Gil - Journal of Physics D: Applied Physics, 2015 - iopscience.iop.org
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
GaN-based green laser diodes
L Jiang, J Liu, A Tian, Y Cheng, Z Li… - Journal of …, 2016 - iopscience.iop.org
Recently, many groups have focused on the development of GaN-based green LDs to meet
the demand for laser display. Great progresses have been achieved in the past few years …
the demand for laser display. Great progresses have been achieved in the past few years …
Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN
LY Kuritzky, JS Speck - MRS communications, 2015 - cambridge.org
More than two decades of III-N materials research has led to the production of visible
spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c …
spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c …
Role of metal vacancies in the mechanism of thermal degradation of InGaN quantum wells
J Smalc-Koziorowska, E Grzanka… - … Applied Materials & …, 2021 - ACS Publications
In this work, we study the thermal degradation of In-rich In x Ga1–x N quantum wells (QWs)
and propose explanation of its origin based on the diffusion of metal vacancies. The …
and propose explanation of its origin based on the diffusion of metal vacancies. The …
Progress in bulk GaN growth
K Xu, JF Wang, GQ Ren - Chinese Physics B, 2015 - iopscience.iop.org
Three main technologies for bulk GaN growth, ie, hydride vapor phase epitaxy (HVPE), Na-
flux method, and ammonothermal method, are discussed. We report our recent work in …
flux method, and ammonothermal method, are discussed. We report our recent work in …
Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN
We demonstrate a vertical (< 1 departure) and smooth (2.0 nm root mean square line-edge
roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl 2 chemistry …
roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl 2 chemistry …
[HTML][HTML] Demonstration of C-plane InGaN-based blue laser diodes grown on a strain-relaxed template
Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed
template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer …
template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer …
Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green …
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous
interest within the photonics community in recent past as advantageous replacements for …
interest within the photonics community in recent past as advantageous replacements for …
Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region
S Mehari, DA Cohen, DL Becerra… - Japanese Journal of …, 2019 - iopscience.iop.org
We obtained InGaN laser diodes (LDs) with a low optical loss (1.9±0.6 cm− 1) by utilizing an
undoped In 0.07 Ga 0.93 N p-waveguide (p-WG) and a remote p-AlGaN electron blocking …
undoped In 0.07 Ga 0.93 N p-waveguide (p-WG) and a remote p-AlGaN electron blocking …