Recent advances in two-dimensional materials beyond graphene

GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha… - ACS …, 2015 - ACS Publications
The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a
field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing …

Atomically thin p–n junctions based on two-dimensional materials

R Frisenda, AJ Molina-Mendoza, T Mueller… - Chemical Society …, 2018 - pubs.rsc.org
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p–
n junction, one of the oldest electrical components which can be used in electronics and …

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

HJ Chuang, B Chamlagain, M Koehler, MM Perera… - Nano …, 2016 - ACS Publications
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of
transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally …

Ultrahigh-responsivity photodetectors from perovskite nanowire arrays for sequentially tunable spectral measurement

W Deng, L Huang, X Xu, X Zhang, X Jin, ST Lee… - Nano …, 2017 - ACS Publications
Compared with polycrystalline films, single-crystalline methylammonium lead halide
(MAPbX3, X= halogen) perovskite nanowires (NWs) with well-defined structure possess …

Electric-field-driven interfacial trapping of drifting triboelectric charges via contact electrification

JK Kim, GH Han, SW Kim, HJ Kim, R Purbia… - Energy & …, 2023 - pubs.rsc.org
In this paper, we report a new facile strategy to maximize the charge density for a high-
output triboelectric nanogenerator (TENG). It was realized by designing a new cationic …

Van der Waals stacked 2D layered materials for optoelectronics

W Zhang, Q Wang, Y Chen, Z Wang, ATS Wee - 2D Materials, 2016 - iopscience.iop.org
The band gaps of many atomically thin 2D layered materials such as graphene, black
phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range …

Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment

M Tosun, L Chan, M Amani, T Roy, GH Ahn, P Taheri… - ACS …, 2016 - ACS Publications
Transition metal dichalcogenides (TMDCs) have been extensively explored for applications
in electronic and optoelectronic devices due to their unique material properties. However …

Recent advances in 2D lateral heterostructures

J Wang, Z Li, H Chen, G Deng, X Niu - Nano-Micro Letters, 2019 - Springer
Recent developments in synthesis and nanofabrication technologies offer the tantalizing
prospect of realizing various applications from two-dimensional (2D) materials. A …

2D photovoltaic devices: progress and prospects

L Wang, L Huang, WC Tan, X Feng, L Chen… - Small …, 2018 - Wiley Online Library
The discovery of the new class of 2D materials has stimulated extensive research interest for
fundamental studies and applied technologies. Owing to their unique electronic and optical …

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

SE Panasci, E Schilirò, G Greco… - … Applied Materials & …, 2021 - ACS Publications
Gold-assisted mechanical exfoliation currently represents a promising method to separate
ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with …