In this study, the effects of thermal annealing on the morphological, structural and optical
properties of BGaAs/GaAs Quantum Wells (QWs) are investigated for the first time. Atomic …

Results of steady-state and time-resolved Photoluminescence (PL) measurements
performed on ZnO thin films, deposited on (001) p-doped silicon substrate, by DC reactive …

We probe the conduction-band offsets (CBOs) and confined states at GaAs/GaAsNBi
quantum wells (QWs). Using a combination of capacitance–voltage (C–V) measurements …

Investigating lattice vibrations through Raman spectroscopy is a crucial method for studying
crystalline materials. Carriers can interact with lattices and influence lattice vibrations; thus, it …

Very recently, the newly emerging all inorganic perovskite have attracted a tremendous
world-wide attention due to their unique optical properties. Particularly, CsPbBr 3 is a very …

This study, utilizing full-potential linear muffin-tin orbital (FPLMTO) calculations within
density functional theory (DFT), delved into the structural properties of zinc-blende GaAs 1-x …

This study, utilizing full-potential linear muffin-tin orbital (FPLMTO) calculations within
density functional theory (DFT), delved into the structural properties of zinc-blende GaAs 1-x …

Intermediate band solar cells are one type of third generation photovoltaic devices. Indeed,
the increase in the power conversion efficiency is achieved through the absorption of low …

Dilute nitride semiconductors, such as GaAs1–x N x alloys, have attracted considerable
attention due to their unique physical properties and wide range of their possible application …

The strain effects in strained GaAs1-xNx epilayers are characterized by Raman
spectroscopy and photocurrent spectra at various nitrogen composition. In addition, the …