High-k dielectrics for 4H-silicon carbide: present status and future perspectives
A Siddiqui, RY Khosa, M Usman - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
gate oxide thin films based on silicon carbide
KO Odesanya, R Ahmad, A Andriyana… - ECS Journal of Solid …, 2022 - iopscience.iop.org
A comprehensive review of the features of silicon carbide (SiC) and various methods of
deposition of gate oxides are presented in this report. The SiC material, which is mostly …
deposition of gate oxides are presented in this report. The SiC material, which is mostly …
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm 2 O 3 films by sputtered pure samarium metal film on silicon
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications
SiC based power devices are promising for the next generation energy-efficient power
converters. But its device performance is always largely limited by the tradition thermal SiO 2 …
converters. But its device performance is always largely limited by the tradition thermal SiO 2 …
Metal-oxide-semiconductor characteristics of Zr-oxynitride thin film on 4H-SiC substrate
Abstract Sputtered Zr on 4H-SiC substrate and followed by simultaneous oxidation and
nitridation in nitrous oxide ambient at various temperatures (400–900 C) for 15 min have …
nitridation in nitrous oxide ambient at various temperatures (400–900 C) for 15 min have …
Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas
Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of
sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate …
sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate …
Electrical characteristics of oxidized/nitrided Zr thin film on Si
In this work, electrical properties of simultaneously oxidized and nitrided sputtered Zr thin
film on n-type Si via N 2 O gas were systematically investigated and charge conduction …
film on n-type Si via N 2 O gas were systematically investigated and charge conduction …
Formation of Zr-oxynitride thin films on 4H-SiC substrate
Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of
sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by …
sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by …
Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate
The morphology, topography, and electrical properties of sputtered pure samarium metal
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient
YH Wong, ZC Lei, NIZ Abidin - Surfaces and Interfaces, 2021 - Elsevier
ZrO 2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient
at 500° C for 15 min. The effects of post-oxidation annealing temperature (400° C–800° C) …
at 500° C for 15 min. The effects of post-oxidation annealing temperature (400° C–800° C) …