A highly sensitive detection of ultraviolet (UV) radiation is required in a broad range of
scientific research, chemical industries, and health-related applications. Traditional UV …

In this opinion we trace the evolution of the quantum dot mid-infrared photodetector, from
epitaxially-grown self-assembled quantum dot detectors, to a new generation of colloidal …

Mid-infrared sensors detect infrared radiation emitted from objects, and are actually widely
used for monitoring gases and moisture as well as for imaging objects at or above room …

We report on fabrication and characterization of high-quality 32× 32 GaAs photodetector
(PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) …

The emission of InAs quantum dots (QDs) grown on Al 0.30 Ga 0.70 As/GaAs
heterostructures and integrated into additional capping/buffer quantum wells (QW), known …

We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si)
substrates by means of metal wafer bonding and an epitaxial lift-off process. According to …

Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate
was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au …

The usefulness of self-powered quantum dot (QD) photodetectors is increased if they are
fabricated on flexible substrates. However, the performance of such photodetectors is …

We demonstrate the highly promising pip InAs/GaAs quantum dots based infrared
photodetector (QDIP) which utilize intra-valence band hole transitions as against electron …

Infrared radiation reflection and transmission of a single layer of gold micropatch two-
dimensional arrays, of patch length∼ 1.0 μ m and width∼ 0.2 μ m, have been carefully …