The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode …
With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …
Hot carrier injection reliability in nanoscale field effect transistors: Modeling and simulation methods
Y Wang, Y Li, Y Yang, W Chen - Electronics, 2022 - mdpi.com
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
Reliability and variability of advanced CMOS devices at cryogenic temperatures
In this work, we present time-zero variability and degradation data obtained from a large set
of on-chip devices in specifically designed arrays, from room temperature to 4K. We show …
of on-chip devices in specifically designed arrays, from room temperature to 4K. We show …
treatment of silicon-hydrogen bond rupture at interfaces
Even after more than 50 years of development, a major issue in silicon-based technology is
the understanding of the Si/SiO 2 interface and its defects, particularly the unsaturated …
the understanding of the Si/SiO 2 interface and its defects, particularly the unsaturated …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Simulation comparison of hot-carrier degradation in nanowire, nanosheet and forksheet FETs
Forksheet (FS) FETs are a novel transistor architecture consisting of vertically stacked nFET
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …
Hot carrier degradation-induced dynamic variability in FinFETs: Experiments and modeling
In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is
studied with decomposing the variation contributions of multiple types of traps. The …
studied with decomposing the variation contributions of multiple types of traps. The …
A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
The Reaction Diffusion Drift (RDD) model is incorporated in the Sentaurus Technology CAD
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
Evaluating forksheet FET reliability concerns by experimental comparison with co-integrated nanosheets
A novel forksheet (FSH) FET architecture has been proposed earlier, consisting of vertically
stacked n-and p-type sheets at opposing sides of a dielectric wall, particularly beneficial for …
stacked n-and p-type sheets at opposing sides of a dielectric wall, particularly beneficial for …
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
We perform a comprehensive analysis of hot-carrier degradation (HCD) in FinFETs. To
accomplish this goal we employ our physics-based HCD model and validate it against …
accomplish this goal we employ our physics-based HCD model and validate it against …