Three-and low-dimensional inorganic semiconductors

GC Papavassiliou - Progress in Solid State Chemistry, 1997 - Elsevier
Research on conducting and semiconducting solids has become one of the fashionable
subjects in the field of physics for the last four or five decades partly because of the …

Band parameters for III–V compound semiconductors and their alloys

I Vurgaftman, JAR Meyer, LR Ram-Mohan - Journal of applied physics, 2001 - pubs.aip.org
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

[图书][B] Physical properties of III-V semiconductor compounds

S Adachi - 1992 - books.google.com
The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films

C Lamberti - Surface Science Reports, 2004 - Elsevier
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

[图书][B] Optical properties of semiconductor quantum dots

U Woggon - 1997 - Springer
This book presents an overview of the current understanding of the physics of zero-
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …

Effects of Ga addition to on its electronic, structural, and defect properties

SH Wei, SB Zhang, A Zunger - Applied physics letters, 1998 - pubs.aip.org
Using a first-principles band structure method we have theoretically studied the effects of Ga
additions on the electronic and structural properties of CuInSe 2. We find that (i) with …

Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs

S Paul, JB Roy, PK Basu - Journal of applied physics, 1991 - pubs.aip.org
The band gap and the intrinsic carrier concentration in a semiconductor are important
material parameters needed in the interpretation of various experimental and theoretical …

[HTML][HTML] Mid-infrared microring resonators and optical waveguides on an InP platform

K Zhang, G Böhm, MA Belkin - Applied Physics Letters, 2022 - pubs.aip.org
We demonstrate mid-infrared ring resonators fabricated in an In 0.53 Ga 0.47 As/InP
materials platform operating at a wavelength of approximately 5.2 μm with quality factors …

[图书][B] Semiconductor alloys: physics and materials engineering

AB Chen, A Sher - 1995 - books.google.com
In the first comprehensive treatment of these technologically important materials, the authors
provide theories linking the properties of semiconductor alloys to their constituent …

Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors

SC Jain, M Willander, H Maes - Semiconductor science and …, 1996 - iopscience.iop.org
Stresses and strains in heterostructures have dominated semiconductor research during the
last ten years. We review the theory and experimental work on stresses in III-V …