Three-and low-dimensional inorganic semiconductors
GC Papavassiliou - Progress in Solid State Chemistry, 1997 - Elsevier
Research on conducting and semiconducting solids has become one of the fashionable
subjects in the field of physics for the last four or five decades partly because of the …
subjects in the field of physics for the last four or five decades partly because of the …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
[图书][B] Physical properties of III-V semiconductor compounds
S Adachi - 1992 - books.google.com
The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …
present diverse material parameters and constants of these semiconductors for a variety of …
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
C Lamberti - Surface Science Reports, 2004 - Elsevier
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …
on semiconductor heterostructures have been required to obtain increasingly strict and well …
[图书][B] Optical properties of semiconductor quantum dots
U Woggon - 1997 - Springer
This book presents an overview of the current understanding of the physics of zero-
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …
dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap …
Effects of Ga addition to on its electronic, structural, and defect properties
Using a first-principles band structure method we have theoretically studied the effects of Ga
additions on the electronic and structural properties of CuInSe 2. We find that (i) with …
additions on the electronic and structural properties of CuInSe 2. We find that (i) with …
Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
The band gap and the intrinsic carrier concentration in a semiconductor are important
material parameters needed in the interpretation of various experimental and theoretical …
material parameters needed in the interpretation of various experimental and theoretical …
[HTML][HTML] Mid-infrared microring resonators and optical waveguides on an InP platform
We demonstrate mid-infrared ring resonators fabricated in an In 0.53 Ga 0.47 As/InP
materials platform operating at a wavelength of approximately 5.2 μm with quality factors …
materials platform operating at a wavelength of approximately 5.2 μm with quality factors …
[图书][B] Semiconductor alloys: physics and materials engineering
AB Chen, A Sher - 1995 - books.google.com
In the first comprehensive treatment of these technologically important materials, the authors
provide theories linking the properties of semiconductor alloys to their constituent …
provide theories linking the properties of semiconductor alloys to their constituent …
Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors
SC Jain, M Willander, H Maes - Semiconductor science and …, 1996 - iopscience.iop.org
Stresses and strains in heterostructures have dominated semiconductor research during the
last ten years. We review the theory and experimental work on stresses in III-V …
last ten years. We review the theory and experimental work on stresses in III-V …