Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
Memristors with nonvolatile memory characteristics have been expected to open a new era
for neuromorphic computing and digital logic. However, existing memristor devices based …
for neuromorphic computing and digital logic. However, existing memristor devices based …
Subfilamentary networks cause cycle-to-cycle variability in memristive devices
C Baeumer, R Valenta, C Schmitz, A Locatelli… - ACS …, 2017 - ACS Publications
A major obstacle for the implementation of redox-based memristive memory or logic
technology is the large cycle-to-cycle and device-to-device variability. Here, we use …
technology is the large cycle-to-cycle and device-to-device variability. Here, we use …
Spectromicroscopic insights for rational design of redox-based memristive devices
The demand for highly scalable, low-power devices for data storage and logic operations is
strongly stimulating research into resistive switching as a novel concept for future non …
strongly stimulating research into resistive switching as a novel concept for future non …
Eightwise Switching Mechanism in Memristive SrTiO3 Devices and Its Implications on the Device Performance
A Sarantopoulos, R Waser… - physica status solidi (a …, 2023 - Wiley Online Library
Filamentary‐type resistive switching devices based on the valence change mechanism
(VCM) have been studied extensively during the past decades, due to their great …
(VCM) have been studied extensively during the past decades, due to their great …
Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Anja Herpers, Christian Lenser, Chanwoo Park, Francesco Offi, Francesco Borgatti,
Giancarlo Panaccione, Stephan Menzel, Rainer Waser, and Regina Dittmann* switching. As …
Giancarlo Panaccione, Stephan Menzel, Rainer Waser, and Regina Dittmann* switching. As …
Donor‐Induced Performance Tuning of Amorphous SrTiO3 Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability
Metal–oxide valence‐change memristive devices are the key contenders for the
development of multilevel nonvolatile analog memories and neuromorphic computing …
development of multilevel nonvolatile analog memories and neuromorphic computing …
Beyond condensed matter physics on the nanoscale: the role of ionic and electrochemical phenomena in the physical functionalities of oxide materials
SV Kalinin, A Borisevich, D Fong - ACS nano, 2012 - ACS Publications
Novel physical functionality enabled by nanoscale control of materials has been the target of
intense scientific exploration and interest for the last two decades, leading directly to the …
intense scientific exploration and interest for the last two decades, leading directly to the …
Nonstoichiometry, Structure, and Properties of BiFeO3 Films
We explore the effect of growth conditions on the cation and anion chemistry, electrical
leakage, conduction mechanisms, and ferroelectric and dielectric behavior of BiFeO3 …
leakage, conduction mechanisms, and ferroelectric and dielectric behavior of BiFeO3 …
Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices
The resistance switching phenomenon in many transition metal oxides is described by ion
motion leading to the formation of oxygen‐deficient, highly electron‐doped filaments. In this …
motion leading to the formation of oxygen‐deficient, highly electron‐doped filaments. In this …