Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Photoelectric detectors are the central part of modern photodetection systems with
numerous commercial and scientific applications. p‐Type semiconductor materials play …

The desire for developing ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

Transparent conducting materials (TCMs) are crucial in the operation of modern opto-
electronic devices, combining the lucrative properties of optical transparency and electronic …

Abstract Gallium oxide (Ga 2 O 3) has recently emerged as a promising candidate for
applications in high-power and radio frequency electronics, deep-ultraviolet optoelectronics …

Co doped ZnO thin films were developed by cost effective Successive ionic layer adsorption
and reaction (SILAR) method. The Co doping concentration was varied from 0, 2, 4, 6 and …

In this work, high-performance solar-blind photodetectors based on MXenes–β-Ga 2 O 3
Schottky junctions have been developed by utilizing transparent conductive MXenes as the …

ZnO is one of the most important functional materials with a wide direct band gap, large
exciton binding energy, and facile growth of high quality nanostructures, which make it very …

Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton
binding energy. The unique property, ie, high efficient light emission at ultraviolet band …

Abstract Monoclinic Ga 2 O 3 (β-Ga 2 O 3) is a promising material for achieving solar-blind
photodetection because of its unique characteristics, including its high breakdown electric …