The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …

In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–
semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a …

This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

This paper reports the characteristics of vertical GaN-based trench metal–oxide–
semiconductor field-effect transistors on a free-standing GaN substrate with a blocking …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Over the last decade, dc–dc power converters have attracted significant attention due to their
increased use in a number of applications from aerospace to renewable energy. The interest …

In this paper, we give an overview of the recent progress in GaN-based high-electron-
mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics …