Synergy of metallic Pt and oxygen vacancy sites in Pt–WO 3− x catalysts for efficiently promoting vanillin hydrodeoxygenation to methylcyclohexane

M Sun, Y Zhang, W Liu, X Zhao, H Luo, G Miao… - Green …, 2022 - pubs.rsc.org
Pt–WO3− x catalysts showed very high catalytic activity in complete hydrodeoxygenation
(HDO) of vanillin, a typical model compound of lignin, affording methylcyclohexane (MCH) in …

Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕ n-Si and Sn/rhodamine-101∕ p-Si Schottky barrier diodes

M Çakar, N Yıldırım, Ş Karataş, C Temirci… - Journal of applied …, 2006 - pubs.aip.org
The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type
Si substrate has been formed by means of the evaporation process and the Sn/rhodamine …

Hierarchical self-assembled nanoclay derived mesoporous CNT/polyindole electrode for supercapacitors

R Oraon, A De Adhikari, SK Tiwari, S Bhattacharyya… - RSC …, 2016 - pubs.rsc.org
A series of self-assembled and open interconnected mesoporous CNT/polyindole (Pind)
electrodes were synthesized by a facile in situ & ex situ approach in the presence of layered …

The temperature dependence of current–voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions

Ş Aydoğan, M Sağlam, A Türüt - Journal of Physics: Condensed …, 2006 - iopscience.iop.org
The current–voltage (I–V) characteristics of Au/Polypyrrole/p-Si/Al contacts have been
measured at temperatures ranging from 70 to 280 K. The I–V characteristics of the device …

Electrical characteristics of diodes fabricated with organic semiconductors

G Liang, T Cui, K Varahramyan - Microelectronic Engineering, 2003 - Elsevier
Organic diodes have been fabricated using 1, 4, 5, 8-naphthalene-tetracarboxylic-
dianhydride (NTCDA), poly (3, 4-ethylenedioxythiophene)(PEDT), doped with poly …

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

AF Özdemir, DA Aldemir, A Kökce, S Altindal - Synthetic Metals, 2009 - Elsevier
Al/P2ClAn/p-Si/Al structure was obtained by the evaporation of the polymer P2ClAn on the
front surface of p-type silicon substrate. The P2ClAn emeraldine salt was chemically …

Electronic and junction properties of poly (2, 5-dimethoxyaniline)–polyethylene oxide blend/metal Schottky diodes

LM Huang, TC Wen, A Gopalan - Thin Solid Films, 2005 - Elsevier
Schottky barrier diode devices were fabricated in a sandwich configuration with a blend film
consisting of a conducting polymer, poly (2, 5-dimethoxyaniline), PDMA in an insulating …

The electrical measurements in poly (2-chloroaniline) based thin film sandwich devices

AF Özdemir, A Gök, A Türüt - Thin Solid Films, 2007 - Elsevier
Al/P2ClAn (CH3COOH)/p-Si/Al structure has been obtained by evaporation of the polymer
P2ClAn (CH3COOH) on the front surface of p-type silicon substrate, P2ClAn: the poly (2 …

Schottky and heterojunction diodes based on poly (3-octylthiophene) and poly (3-methylthiophene) films of high tensile strength

RV Vardhanan, L Zhou, Z Gao - Thin Solid Films, 1999 - Elsevier
Schottky and heterojunction diodes were fabricated using high tensile strength polymers.
The heterojunction diode was fabricated by sequential electrochemical polymerisation of 3 …

Conductance and capacitance–frequency characteristics of polypyrrole/p‐type silicon structures

M Cakar, M Biber, M Saǧlam… - Journal of Polymer …, 2003 - Wiley Online Library
We formed a polypyrrole/p‐type silicon device by an anodization process. An aluminum
electrode was used as an ohmic contact. From the current–voltage characteristics of the …