Metal-assisted chemical etching (MACE) has received much attention from researchers
because it can be used to fabricate plasma-free anisotropic etching profiles for …

Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by
metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square …

We introduce a method for the direct imprinting of GaAs substrates using wet-chemical
stamping. The predefined patterns on the stamps etch the GaAs substrates via metal …

This chapter provides an overview of fabrication of silicon nanowires by top-down etching
methods. The focus will be on wet and dry etching methods to achieve vertically aligned …

Conventional lithography using photons and electrons continues to evolve to scale down
three-dimensional nanoscale patterns, but the complexity of technology and equipment is …

A scalable fabrication technique for silicon nanowires based on integrating nanoimprint
lithography, metal assisted chemical etching (MACE), and spectroscopic scatterometry is …

MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without
compromising crystallinity. The current density increases greatly, which is directly due to the …

We propose and demonstrate a new and room-temperature approach for the fabrication of
well-ordered arrays of vertically aligned, diameter-, length-, and interspacing-controllable Si …

We demonstrated time-dependent mass transport mechanisms of Au-assisted chemical
etching of Si substrates. Variations in the etch rate and surface topology were correlated with …

Abstract n-type silicon substrates were etched via metal-assisted chemical etching with
silver as catalyst and aqueous solution of hydrofluoric acid (HF) and hydrogen peroxide (H 2 …