Recent advances in wide bandgap semiconductor biological and gas sensors
There has been significant recent interest in the use of surface-functionalized thin film and
nanowire wide bandgap semiconductors, principally GaN, InN, ZnO and SiC, for sensing of …
nanowire wide bandgap semiconductors, principally GaN, InN, ZnO and SiC, for sensing of …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Radiation effects in GaN-based high electron mobility transistors
SJ Pearton, YS Hwang, F Ren - Jom, 2015 - Springer
GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the
high bond strength in III-nitride materials. In this paper, we review data on the radiation …
high bond strength in III-nitride materials. In this paper, we review data on the radiation …
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …
stability, miniaturization and integration, novel materials such as wide band gap …
Electrical detection of immobilized proteins with ungated AlGaN∕ GaN high-electron-mobility Transistors
Ungated AlGaN∕ GaN high-electron-mobility transistor (HEMT) structures were
functionalized in the gate region with aminopropyl silane. This serves as a binding layer to …
functionalized in the gate region with aminopropyl silane. This serves as a binding layer to …
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan… - US Patent …, 2006 - Google Patents
Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕ GaN high electron mobility transistors
BS Kang, HT Wang, F Ren, SJ Pearton… - Applied Physics …, 2007 - pubs.aip.org
ZnO nanorod-gated Al Ga N∕ Ga N high electron mobility transistors (HEMTs) are
demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on …
demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on …
Prostate specific antigen detection using AlGaN∕ GaN high electron mobility transistors
Antibody-functionalized Au-gated Al Ga N∕ Ga N high electron mobility transistors (HEMTs)
were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the …
were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the …
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart… - IEEE electron device …, 2006 - ieeexplore.ieee.org
Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon
substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron …
substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron …
Fast electrical detection of Hg (II) ions with AlGaN∕ GaN high electron mobility transistors
HT Wang, BS Kang, TF Chancellor, TP Lele… - Applied Physics …, 2007 - pubs.aip.org
Bare Au gated and thioglycolic acid functionalized Au-gated Al Ga N∕ Ga N high electron
mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than …
mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than …