A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication
S Radovanovic, AJ Annema… - IEEE Journal of Solid …, 2005 - ieeexplore.ieee.org
This paper presents a monolithic optical detector, consisting of an integrated photodiode
and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at …
and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at …
An 8.5-Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer
D Lee, J Han, G Han, SM Park - IEEE Journal of Solid-State …, 2010 - ieeexplore.ieee.org
An 8.5-Gb/s single-chip optoelectronic integrated circuit (OEIC) for short-distance optical
communications is realized in a 0.13-μ m CMOS process. The OEIC consists of an on-chip …
communications is realized in a 0.13-μ m CMOS process. The OEIC consists of an on-chip …
[图书][B] Silicon optoelectronic integrated circuits
H Zimmermann, H Zimmermann, Evenson - 2004 - Springer
The Springer Series in Advanced Microelectronics provides systematic information on all the
topics relevant for the design, processing, and manufacturing of microelectronic devices …
topics relevant for the design, processing, and manufacturing of microelectronic devices …
High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology
SM Csutak, JD Schaub, WE Wu… - IEEE Photonics …, 2002 - ieeexplore.ieee.org
A monolithically integrated silicon optical receiver fabricated in a 130-nm unmodified
complementary metal-oxide-semiconductor process flow on 2-μm-thick silicon-on-insulator …
complementary metal-oxide-semiconductor process flow on 2-μm-thick silicon-on-insulator …
An 18-Gb/s fully integrated optical receiver with adaptive cascaded equalizer
An 18-Gb/s fully integrated optoelectronic integrated circuit for short-distance
communications is realized in the TSMC 65-nm CMOS process. The system consists of a …
communications is realized in the TSMC 65-nm CMOS process. The system consists of a …
A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor
Z Pei, CS Liang, LS Lai, YT Tseng… - IEEE Electron …, 2003 - ieeexplore.ieee.org
A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum
wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar …
wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar …
High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology
SM Csutak, JD Schaub, WE Wu… - Journal of lightwave …, 2002 - ieeexplore.ieee.org
A complementary metal-oxide-semiconductor (CMOS) monolithically integrated
photoreceiver is presented. The circuit was fabricated in a 130-nm unmodified CMOS …
photoreceiver is presented. The circuit was fabricated in a 130-nm unmodified CMOS …
Integrated silicon optical receiver with avalanche photodiode
SM Csutak, JD Schaub, S Wang, J Mogab… - IEE Proceedings …, 2003 - IET
An optical receiver consisting of an avalanche photodiode integrated with a transimpedance
amplifier is reported. The optical receiver was fabricated on a 2 µm thick SOI substrate in a …
amplifier is reported. The optical receiver was fabricated on a 2 µm thick SOI substrate in a …
Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS …
We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with
standard complementary metal-oxide-semiconductor (CMOS) technology. Current …
standard complementary metal-oxide-semiconductor (CMOS) technology. Current …
A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS
This paper presents three different types of on-chip avalanche photodiodes (APDs) realized
in a TSMC 180 nm 1P6M RF CMOS process, ie, a P+/N-well (NW) APD for its high …
in a TSMC 180 nm 1P6M RF CMOS process, ie, a P+/N-well (NW) APD for its high …