Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys
ZL Bushell, CA Broderick, L Nattermann, R Joseph… - Scientific Reports, 2019 - nature.com
Using spectroscopic ellipsometry measurements on GaP1− x Bi x/GaP epitaxial layers up to
x= 3.7% we observe a giant bowing of the direct band gap (E g Γ) and valence band spin …
x= 3.7% we observe a giant bowing of the direct band gap (E g Γ) and valence band spin …
Impact of a small change in growth temperature on the tail states of GaAsBi
K Kakuyama, S Hasegawa, H Nishinaka… - Journal of Applied …, 2019 - pubs.aip.org
The influence of growth temperature (T sub) on the tail states of GaAs 1− x Bi x (0≦ x≦
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
[HTML][HTML] Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
Laser diodes employing a strain-compensated GaAs 1− x Bi x/GaAs 1− y P y single quantum
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)
Quaternary alloy GaAsPBi is a novel III–V compound with attractive optical properties and
can in principle be grown lattice-matched to GaAs. However, the practical realization of the …
can in principle be grown lattice-matched to GaAs. However, the practical realization of the …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
High verticality vapor–liquid–solid growth of GaAs 0.99 Bi 0.01 nanowires using Ga–Bi assisted catalytic droplets
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near-and mid-
infrared wavelengths due to the optical properties of the Bi-containing compound and the …
infrared wavelengths due to the optical properties of the Bi-containing compound and the …
Applications of bismuth-containing III–V semiconductors in devices
M Yoshimoto, EH Asahi… - Molecular Beam Epitaxy …, 2019 - books.google.com
Applications of bismuth-containing III–V semiconductors in devices Page 401 k 23 Applications
of Bismuth-Containing III–V Semiconductors in Devices Masahiro Yoshimoto Kyoto Institute of …
of Bismuth-Containing III–V Semiconductors in Devices Masahiro Yoshimoto Kyoto Institute of …
Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers
The impact of post‐growth thermal annealing on the internal device parameters such as
internal loss (αi), internal differential quantum efficiency () and modal material gain (Γg0J) of …
internal loss (αi), internal differential quantum efficiency () and modal material gain (Γg0J) of …
Strategic molecular beam epitaxial growth of GaAs/GaAsBi heterostructures and nanostructures
In this chapter, we go over epitaxial growth of bismide thin films, multiple quantum wells, and
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …